Eyal En Gad – Rewriting flash memories using modern coding techniques


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Flash memory is a crucial data-storage technology in today’s and tomorrow’s information ecosystem. Various channel-coding approaches have been proposed for increasing the efficiency of flash memories. I will discuss one of these approaches, called “write-once memory” (WOM) coding, in which the memory is rewritten before it is being erased. WOM coding has the potential to significantly increase the lifetime of flash memories, which would allow for greater storage densities. While the area have seen major progress in recent years, current solutions are still not adequate for practical use. I will present recent work that aim to address this gap, using modern techniques of entropy polarization and message passing on sparse-graph codes.

Bio:
Eyal En Gad is a postdoctoral researcher at the University of Southern California. He received the B.Sc. degree in electrical engineering from the Technion, in 2008, and the M.Sc and Ph.D. degrees in electrical engineering from the California Institute of Technology, in 2012 and 2015, respectively. His research interests include information theory, data storage, and machine learning.